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SILICON CARBIDE SCHOTTKY BARRIER DIODE
Temperature-Independent
High-Frequency Operation
Reverse Breakdown Voltage: 600V 650V 1200V
Package type: TO220, TO247 or customized -
SILICON CARBIDE MOSFET
Higher frequency operation
Reduction in system cost
Longer lifetime and higher reliability
Highest efficiency for reduced cooling effort -
SILICON CARBIDE POWER MODULE
SiC power MOSFET
High-frequency Operation
Optimized intrinsic reverse diode
Isolated copper baseplate using DBC technology
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